693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Weinreich, Wenke
Fraunhofer Institute for Photonic Microsystems
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applicationscitations
- 2022Optimization of LPCVD phosphorous-doped SiGe thin films for CMOS-compatible thermoelectric applicationscitations
- 2021Aging in Ferroelectric Si-Doped Hafnium Oxide Thin Filmscitations
- 2019Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin filmscitations
- 2019Depth spectroscopy analysis of La-doped HfO2 ALD thin films in 3D structures by HAXPES and ToF-SIMS
- 2019Depth spectroscopy analysis of La-doped HfO2 ALD thin films in 3D structures by HAXPES and ToF-SIMS
- 2019ToF-SIMS 3d analysis of thin films deposited in high aspect ratio structures via atomic layer deposition and chemical vapor depositioncitations
- 2013Surface self-organization and structure of highly doped n-InGaAs ultra-shallow junctions
- 2013TEMAZ/O-3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal-insulator-metal capacitorscitations
- 2011Macroscopic and microscopic electrical characterizations of high-k ZrO 2 and ZrO2/Al2O3/ZrO2 metal-insulator-metal structurescitations
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