693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Thayne, Iain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2022Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growthcitations
- 2021Improved quality of InSb-on-insulator microstructures by flash annealing into meltcitations
- 2019Optical properties of refractory metal based thin films
- 2019Integration of InSb on Si by Rapid Melt Growth
- 2018Optical properties of refractory metal based thin filmscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by <i>in-situ</i> fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
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