People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Han, Yisong
University of Warwick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Block copolymer synthesis in ionic liquid via polymerisation-induced self-assembly: A convenient route to gel electrolytescitations
- 2024Electrodeposition of 2D layered tungsten diselenide thin films using a single source precursorcitations
- 2022Mesoporous silica films as hard templates for electrodeposition of nanostructured goldcitations
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 2022Influence of extrusion parameters on filled polyphenylsulfone tufting yarns on open-hole tensile strengthcitations
- 2021Electrodeposited WS 2 monolayers on patterned graphenecitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2021Lateral growth of MoS 2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Data for Atomic level termination for passivation and functionalisation of silicon surfaces
- 2020Large-area electrodeposition of few-layer MoS 2 on graphene for 2D material heterostructurescitations
- 2020Atomic level termination for passivation and functionalisation of silicon surfacescitations
- 2019Generation of maghemite nanocrystals from iron–sulfur centrescitations
- 2016Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
- 2016Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.
- 2016Toward defect-free semi-polar GaN templates on pre-structured sapphirecitations
- 2015Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon.
Places of action
Organizations | Location | People |
---|