693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kirste, Lutz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (46/46 displayed)
- 2024Understanding Interfaces in AlScN/GaN Heterostructurescitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmospherecitations
- 2024Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applicationscitations
- 2024Online and Ex Situ Damage Characterization Techniques for Fiber-Reinforced Composites under Ultrasonic Cyclic Three-Point Bendingcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024Ultrasonic reconsolidation of separated CF-PEEK composite layers at 20 kHz — an experimental study on parameter optimization and Ex-situ characterizationcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2024Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2024Understanding interfaces in AlScN/GaN heterostructurescitations
- 2023A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers with Low Channel Thicknesscitations
- 2023Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaNcitations
- 2023Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitridecitations
- 2023AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition with 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHzcitations
- 2023Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxycitations
- 2023Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Depositioncitations
- 2023Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor depositioncitations
- 2022Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansioncitations
- 2022Leakage mechanism in AlxGa1-xN/GaN heterostructures with AlN interlayercitations
- 2022Rayleigh waves in nonpolar Al0.7Sc0.3N(1120) films with enhanced electromechanical coupling and quality factorcitations
- 2022Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor depositioncitations
- 2022In-situ Detection of Degradation in Power Electronic Modules During Lifetime Testing using Lock-in Thermography
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2020In situ approach to fabricate heterojunction p-n CuO-ZnO nanostructures for efficient photocatalytic reactionscitations
- 2020Investigations of the deuterium permeability of as-deposited and oxidized Ti2AlN coatingscitations
- 2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistorscitations
- 2020Metal-organic chemical vapor deposition of aluminum scandium nitridecitations
- 2020Optimization of metal-organic chemical vapor deposition regrown n-GaN ; Optimization of MOCVD Regrown n-GaNcitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin filmscitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin filmscitations
- 2018Microstructural investigations of polycrystalline Ti2AlN prepared by physical vapor deposition of Ti-AlN multilayerscitations
- 2018A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etchingcitations
- 2018Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substratescitations
- 2018Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devicescitations
- 2018Temperature dependence of the pyroelectric coefficient of AlScN thin filmscitations
- 2016Piezoelectric AlN films for FPW sensors with improved device performancecitations
- 2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substratescitations
- 2012Diamond nanophotonicscitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2010Investigation of stress in AIN thin films for piezoelectric MEMS
- 2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study ; Sauerstoff induzierte Verspannungshomogenisierung in AlN Nukleationsschichten und deren Einfluss auf MOVPE GaN Schichten auf Saphir: Eine Röntgendiffraktometrie-Studiecitations
- 2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC ; Röntgentopographie an (Al,Ga)N/GaN basierenden elektronischen Bauelementstrukturen auf SiCcitations
- 2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range ; GaInAsN und GaInAsN Quantenfilm-Diodenlaser mit hohen In-Gehalt auf InP-Substrat mit Emissionswellenlängen im Bereich 2,2-2,3 µmcitations
- 2003Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten ; Growth and defectstructure of Epitaxial (Al,Ga)N-Layers
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