693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Slotte, Jonatan
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2020Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Source/Drain Materials for Ge nMOS Devices : Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Source/Drain Materials for Ge nMOS Devicescitations
- 2019Evolution of phosphorus-vacancy clusters in epitaxial germaniumcitations
- 2019Heavily phosphorus doped germanium:Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activationcitations
- 2018On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applicationscitations
- 2016Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductorscitations
- 2015Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspectscitations
Places of action
| Organizations | Location | People |
|---|