693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Derluyn, Joff
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2021AlGaN channel high electron mobility transistors with regrown ohmic contactscitations
- 2020Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructurecitations
- 2019Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experimentcitations
- 20141900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removalcitations
- 2010Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPEcitations
- 2008AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength rangecitations
- 2006Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistorscitations
- 2005The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaNcitations
- 2005Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layercitations
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