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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Dubois, Sébastien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Tracking Hydrogen During Poly-Si/SiOx Contact Fabrication: An Infrared Spectroscopy Analysis of Si–H Bonds Configurations
- 2023Passivating Silicon Tunnel Diode for Perovskite on Silicon nip Tandem Solar Cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2021Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cellscitations
- 2019Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2019Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cellscitations
- 2019Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processingcitations
- 2019Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cellscitations
- 2019SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation studycitations
- 2018Conductivity and Surface Passivation Properties of Boron‐Doped Poly‐Silicon Passivated Contacts for c‐Si Solar Cellscitations
- 2018Improvement of the conductivity and surface passivation properties of boron-doped poly-silicon on oxidecitations
Places of action
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