693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wellmann, Peter J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (208/208 displayed)
- 2024Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substratescitations
- 2024Synthesis of BaZrS<sub>3</sub> and BaS<sub>3</sub> Thin Films: High and Low Temperature Approachescitations
- 2023Novel Photonic Applications of Silicon Carbidecitations
- 2023Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °Ccitations
- 2022Multiscale Simulations for Defect-Controlled Processing of Group IV Materialscitations
- 2022Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Processcitations
- 2021In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technologycitations
- 2021Special Equipment for Ammonothermal Processescitations
- 2021Analysis of compositional gradients in cu(In,ga)(s,se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energiescitations
- 2021Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substratescitations
- 2021New approaches and understandings in the growth of cubic silicon carbidecitations
- 2020Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Resultscitations
- 2020Prospects of bulk growth of 3C-SiC using sublimation growthcitations
- 2020Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualizationcitations
- 2020Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameterscitations
- 2020Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperaturescitations
- 2020Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystalscitations
- 2020Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substratescitations
- 2020On the importance of dislocation flow in continuum plasticity models for semiconductor materialscitations
- 2020The 50th Anniversary of the German Association for Crystal Growth, DGKK
- 2019Advances in in situ SiC growth analysis using cone beam computed tomographycitations
- 2019Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiCcitations
- 2019Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boulescitations
- 2019Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growthcitations
- 2019Vacuum-free and highly dense nanoparticle based low-band-gap CuInSe2 thin-films manufactured by face-to-face annealing with application of uniaxial mechanical pressurecitations
- 2019Vapor growth of 3C-SiC using the transition layer of 3C-SiC on Si CVD templatescitations
- 2019Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystalscitations
- 2019Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boulescitations
- 2019Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystalcitations
- 2019Limitations during vapor phase growth of bulk (100) 3C-SiC using 3C-SiC-on-SiC seeding stackscitations
- 2019Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiCcitations
- 2019An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applicationscitations
- 2019Modeling of the PVT growth process of bulk 3C-SiC-growth process development and challenge of the right materials data basecitations
- 2019Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbidecitations
- 2019Deep electronic levels in n-type and p-type 3C-SiCcitations
- 2019Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbidecitations
- 2019Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setupcitations
- 2018From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reductioncitations
- 2018Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boulescitations
- 2018Solution Growth of Silicon Carbide Using the Vertical Bridgman Methodcitations
- 2018Review of SiC crystal growth technologycitations
- 2018Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Techniquecitations
- 2018In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaNcitations
- 2017Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layerscitations
- 2017Growth, defects and doping of 3C-SiC on hexagonal polytypescitations
- 2017Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substratescitations
- 2017Growing bulk-like 3C-SiC from seeding material produced by CVDcitations
- 2017Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imagingcitations
- 20173C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layerscitations
- 2017Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopycitations
- 2017Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamondcitations
- 2017Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizerscitations
- 2016Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitridescitations
- 2016Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templatescitations
- 2016Solar driven energy conversion applications based on 3C-SiCcitations
- 2016Cubic silicon carbide as a potential photovoltaic materialcitations
- 2016High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °Ccitations
- 2016Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditionscitations
- 2016Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy
- 2015Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layercitations
- 2015Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formationcitations
- 2015Growth of sic bulk crystals for application in power electronic devices - Process design, 2D and 3D X-ray in situ visualization and advanced dopingcitations
- 2015Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiCcitations
- 2015Ceramic liner technology for ammonoacidic synthesiscitations
- 2015Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications
- 2015Single domain 3C-SiC growth on off-oriented 4H-SiC Substratescitations
- 2015Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescencecitations
- 2015Towards the Growth of SiGeC Epitaxial Layers for the Application in Si Solar Cellscitations
- 2015Low temperature formation of CuIn1 - XGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursorscitations
- 2015Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 °ccitations
- 2015Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolutioncitations
- 2014Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications
- 2014Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniquescitations
- 2014Towards X-ray in-situ visualization of ammonothermal crystal growth of nitridescitations
- 2014Carrier lifetimes and influence of in-grown defects in N-B Co-doped 6H-SiCcitations
- 2014Nucleation and growth of polycrystalline SiCcitations
- 2014The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxycitations
- 2014Advances in wide bandgap SiC for optoelectronicscitations
- 2014Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomographycitations
- 2013Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example systemcitations
- 2013Photoluminescence topography of fluorescent SiC and its corresponding source crystals
- 2013Morphological and optical stability in growth of fluorescent SiC on low off-axis substratescitations
- 2013Lateral boron distribution in polycrystalline sic source materialscitations
- 2013Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substratescitations
- 2013Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applicationscitations
- 2013Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiCcitations
- 2013Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
- 2013Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growthcitations
- 2013Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu 2ZnSnSe4 filmscitations
- 2013Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxycitations
- 2013Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processingcitations
- 2013In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated seleniumcitations
- 2013Polycrystalline SiC as source material for the growth of fluorescent SiC layerscitations
- 2013Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursorscitations
- 2012Fluorescent SiC as a new material for white LEDscitations
- 2012Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seedscitations
- 2012Fluorescent SiC for white light-emitting diodes
- 2012Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)citations
- 2012Application of printable ITO/PEDOT nanocomposites as transparent electrodes in optoelectronic devicescitations
- 2012Defect structures at the silicon/3C-SiC interface
- 2012Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on siliconcitations
- 2012Broadband and omnidirectional light harvesting enhancement of fluorescent SiCcitations
- 2012Nucleation control of cubic silicon carbide on 6H-substratescitations
- 2012Effects of source material on epitaxial growth of fluorescent SiCcitations
- 2012Preface to selected papers from EMRS 2011 symposium Q: Engineering of wide bandgap semiconductor materials for energy saving
- 2011The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)2 investigated by in-situ X-ray diffractioncitations
- 2011Efficient image segmentation for detection of dislocations in high resolution light microscope images of SiC waferscitations
- 2011Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devicescitations
- 2011Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxycitations
- 2011Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivativescitations
- 2011Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acidcitations
- 2011Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolutioncitations
- 2010Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffractioncitations
- 2010Determination of material inhomogeneities in CuIn(Se,S)2 solar cell materials by high resolution cathodoluminescence topographycitations
- 2010Real-time investigations on the formation of CuIn(S,Se)2 while annealing precursors with varying sulfur content
- 2010Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocompositescitations
- 2010Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materialscitations
- 2010Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100)citations
- 2009Sulfo-selenization of metallic thin films of Cu, In and Cu-Incitations
- 2009On the lattice parameters of silicon carbidecitations
- 2009Silicon carbide growth: C/Si ratio evaluation and modeling
- 2009Aluminum p-type doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
- 2009Thermal expansion coefficients of 6H Silicon Carbide
- 2009Germanium incorporation during pvt bulk growth of silicon carbidecitations
- 2009P- and n-type doping in SiC sublimation epitaxy using highly doped substratescitations
- 2009In-situ observation of polytype switches during SiC PVT bulk growth by high energy X-ray diffractioncitations
- 2009Photoluminescence-topography of the p-type doped SiC wafers for determination of doping inhomogeneitycitations
- 2009Real-time Investigations on the Formation of CuIn(S,Se)2 while annealing precursors with varying sulfur contentcitations
- 2009Conductance enhancement mechanisms of printable nanoparticulate Indium Tin Oxide (ITO) layers for application in organic electronic devicescitations
- 2008Conductance enhancement of nano-particulate indium tin oxide layers fabricated by printing technique
- 2008Bulk growth of SiCcitations
- 2008Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiCcitations
- 2008Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 filmscitations
- 2008Determination of dislocation density in MOVPE grown GaN layers using KOH defect etchingcitations
- 2008Bulk growth of SiC - Review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolutioncitations
- 2007Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystalscitations
- 2007Numerical modeling and experimental verification of modified-PVT crystal growth of SiCcitations
- 2007Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growthcitations
- 2007Cathodoluminescence characterization of organic semiconductor materials for light emitting device applicationscitations
- 2007Contactless electrical defect characterization and topography of a-plane grown epitaxial layerscitations
- 2007In-situ x-ray measurements of defect generation during PVT growth of SiCcitations
- 2007Growth and characterization of13C enriched 4H-SiC for fundamental materials studiescitations
- 2007Light extraction from OLEDs for lighting applications through light scatteringcitations
- 2007Defect etching of non-polar and semi-polar faces in SiCcitations
- 2007Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layerscitations
- 2007Erratum to "Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC". [J. Crystal Growth 289 (2006) 520-526] (DOI:10.1016/j.jcrysgro.2005.11.096)citations
- 2007Status of SiC bulk growth processescitations
- 2006Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiCcitations
- 2006In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
- 2006Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped α-SiC substrates grown by the M-PVT method
- 2006Silicon carbide growth: C/Si ratio evaluation and modeling
- 2006Growth of silicon carbide bulk crystals with a modified physical vapor transport techniquecitations
- 2006Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scatteringcitations
- 2006Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
- 2006Vapor growth of SiC bulk crystals and its challenge of dopingcitations
- 2006Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiCcitations
- 2006Electronic Raman studies of shallow donors in silicon carbide
- 2006Modeling and experimental verification of SiC M-PVT bulk crystal growth
- 2006Anomalous charge carrier transport phenomena in highly aluminum doped SiCcitations
- 2006The influence of microstructure on the magnetic properties of WC/Co hardmetalscitations
- 2006Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mappingcitations
- 2006Silicon carbide CVD for electronic device applicationscitations
- 2006Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystalscitations
- 2005Optical mapping of aluminum doped p-type SiC waferscitations
- 2005Photoluminescence study of In-situ rare earth doped PVT-grown SiC Single crystals
- 2005Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions
- 2005High AI-doping of SiC using a modified PVT (M-PVT) growth set-up
- 2005Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability
- 2005Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes
- 2005SiC single crystal growth by a modified physical vapor transport techniquecitations
- 2005Additional pipework opens up transistor applications for SiC
- 2005Micro-optical characterization study of highly p-type doped SiC:AI wafers
- 2005Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics
- 2005In situ visualization of SiC physical vapor transport crystal growthcitations
- 2004Quantitative determination of the doping level distribution in n-type GaAs using absorption mappingcitations
- 2004Analysis of graphitization during physical vapor transport growth of silicon carbidecitations
- 2004Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as sourcecitations
- 2004On the origin of the below band-gap absorption bands in n-type (N) 4H- and 6H-SiCcitations
- 2004Structural defects in SiC crystals investigated by high energy x-ray diffraction
- 2004In-situ Er-doping of SiC bulk single crystalscitations
- 2003Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiCcitations
- 2003Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiCcitations
- 2003Determination of doping levels and their distribution in SiC by optical techniquescitations
- 2003Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystalscitations
- 2003Investigation of mass transport during PVT growth of SiC by 13C labeling of source materialcitations
- 2003Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
- 2002'In situ synthesis' of source material from elemental Si and C during SiC PVT growth process and characterization using digital X-ray imagingcitations
- 2002Aluminum doping of 6H- And 4H-SiC with a modified PVT growth methodcitations
- 2002Analysis of silicon incorporation into VGF-grown GaAscitations
- 2002Optical quantitative determination of doping levels and their distribution in SiCcitations
- 2002Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth methodcitations
- 2002Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurementscitations
- 2001Study of boron incorporation during PVT growth of p-type SiC crystalscitations
- 2001Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurementscitations
- 2001Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystalscitations
- 2001Stability criteria for 4H-SiC bulk growthcitations
- 2001On the preparation of semi-insulating SiC bulk crystals by the PVT techniquecitations
- 2001Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiCcitations
- 2001SiC crystal growth from the vapor and liquid phase
- 2001Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth processcitations
- 2001Impact of source material on silicon carbide vapor transport growth processcitations
- 2001Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiCcitations
- 2001Investigation of a PVT SiC-growth set-up modified by an additional gas flowcitations
- 2000Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVTcitations
- 2000In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imagingcitations
- 2000Digital X-ray imaging of SiC PVT process: Analysis of crystal growth and powder source degradation
- 2000Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions
- 2000Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth
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