693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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| Rignanese, Gian-Marco |
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Renard, Charles
Centre for Nanoscience and Nanotechnology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Epitaxy of hexagonal Ge-2H : lessons from in situ TEM observations
- 2023Epitaxy of hexagonal Ge-2H : growth regimes and related I3 defects
- 2022Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2Hcitations
- 2019In situ electrical characterization of YxTiy getter thin films during thermal activationcitations
- 2019Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells
- 2017GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgalliumcitations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO<inf>2</inf>citations
- 2014Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO 2citations
- 2008Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor depositioncitations
- 2007Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor depositioncitations
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