693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sasioglu, Ersoy
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface
- 2021First principles design of Ohmic spin diodes based on quaternary Heusler compoundscitations
- 2020Half-Metal–Spin-Gapless-Semiconductor Junctions as a Route to the Ideal Diodecitations
- 2020Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistorscitations
- 2019Proposal for Reconfigurable Magnetic Tunnel Diode and Transistorcitations
- 2017A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compoundscitations
- 2016Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles studycitations
- 2016Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors143citations
- 2016Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductorscitations
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