693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Giubertoni, Damiano
Fondazione Bruno Kessler
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (31/31 displayed)
- 2024Enhancing the Deposition Rate and Uniformity in 3D Gold Microelectrode Arrays via Ultrasonic-Enhanced Template-Assisted Electrodeposition
- 2023Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography
- 2023Imaging of Antiferroelectric Dark Modes in an Inverted Plasmonic Latticecitations
- 2023Imaging of Antiferroelectric Dark Modes in an Inverted Plasmonic Latticecitations
- 2023Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritronscitations
- 2022Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoidscitations
- 2022Omnidirectional and broadband photon harvesting in self-organized Ge columnar nanovoidscitations
- 2018The role of incidence angle in the morphology evolution of Ge surfaces irradiated by medium-energy Au ionscitations
- 2014GIXRF characterization of thin Ge1-xSnx films
- 2014Observation of point defect injection from electrical de-activation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing
- 2014Development of nano-topography during SIMS characterization of Ge1-xSnx alloy
- 2014Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls
- 2013Dynamic SIMS Characterization of Ge1-xSnx alloy
- 2012Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealingcitations
- 2012Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layerscitations
- 2010Non-melting annealing of silicon by CO2 lasercitations
- 2010Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in siliconcitations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing
- 2009Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment
- 2008Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealingcitations
- 2008P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activationcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of ultrashallow implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2006Deactivation of low energy boron implants into preamorphized Si after non-melt laser annealing with multiple scans
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and Fcitations
- 2004The interaction between Xe and F in Si (100) pre-amorphised with 20 keV Xe and implanted with low energy BF2citations
- 2003Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures
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