693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jakomin, R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2013Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layerscitations
- 2012Strain engineering for optical gain in germaniumcitations
- 2012Control of tensile strain in germanium waveguides through silicon nitride layerscitations
- 2011Optical gain in single tensile-strained germanium photonic wirecitations
- 2011P and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactorcitations
- 2011Stimulated emission in single tensile-strained Ge photonic wirecitations
- 2011High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor depositioncitations
- 2010Mechanical tensile strain engineering of Ge for gain achievement
- 2010Direct and indirect band gap room temperature electroluminescence of Ge diodescitations
- 2009First results on the APOLLON project multi-approach for high efficiency integrated and intelligent concentrating PV modules (systems)citations
- 2009Tensile-strain and n-type doping of germanium-on-insulator: Towards a Ge laser
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