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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Mereuta, A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2002Monolithic tunable InP-based vertical cavity surface emitting lasercitations
- 2002Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μmcitations
- 2002Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dotscitations
- 2002Lasing operation under pulsed optical pumping of 1.55μm externalcavity VCSELs using an InP/AlGaInAs bottom Bragg reflector
- 2001Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dotscitations
- 2001Bimodal distribution of indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dotscitations
- 2001(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength rangecitations
- 2001MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55μm VCSELscitations
- 2000InGaAsP/AlGaAs multiple wavelength vertical cavity lasers and arrays in the 1.5-μm band fabricated by localized wafer fusion technique
- 2000Long wavelength InGa(N)As/GaAs QW laser structures grown by MOVPE
- 2000Laser performance comparison of long-wavelength strained InGaNAs and InGaAs QW laser diodes grown by AP-MOVPE
- 2000Performance comparison of strained InGaNAs/GaAs and InGaAs/GaAs QW laser diodes grown by MOVPEcitations
- 20001.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral responsecitations
- 2000Optical and structural properties of 1.3 μm emitting InAs/GaAs quantum dots grown by LP-MOVPE as a function of the re-growth temperature
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