693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chriqui, Y.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2005Exploration of the ultimate patterning potential achievable with focused ion beamscitations
- 2005InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates
- 2005Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substratecitations
- 2004Photonics, electronics and silicon-germanium: A possible convergence?
- 2004Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate
- 2004Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: Reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injectioncitations
- 2003Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substratecitations
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