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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Levallois, Christophe
Institut National des Sciences Appliquées de Rennes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.citations
- 2023Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor depositioncitations
- 2022Low-temperature spatially-resolved luminescence spectroscopy of microstructures with strained III-V quantum wells
- 2022Strain engineering in III-V photonic components through structuration of SiN x filmscitations
- 2021III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production
- 2021Stress Engineering of Dielectric Films on Semiconductor Substrates
- 2021Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR-PECVD and CCP-PECVD
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Mechanical strain mapping of GaAs based VCSELscitations
- 2020Random crystal polarity of Gallium phosphide microdisks on silicon
- 2020Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stresscitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizations
- 2019Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvestingcitations
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2016Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias
- 2016Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias
- 2016Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wellscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
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