693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
García Hemme, Eric
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingcitations
- 2023Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
- 2023Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements
- 2022Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser meltingcitations
- 2022On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodescitations
- 2022On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodescitations
- 2016Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signaturescitations
- 2016Limitations of high pressure sputtering for amorphous silicon depositioncitations
- 2015Meyer Neldel rule application to silicon supersaturated with transition metalscitations
- 2014Room-temperature operation of a titanium supersaturated silicon-based infrared photodetectorcitations
- 2013Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
- 2013Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band materialcitations
- 2013Electrical decoupling effect on intermediate band Ti-implanted silicon layerscitations
- 2013Electrical decoupling effect on intermediate band Ti-implanted silicon layerscitations
- 2013Double ion implantation and pulsed laser melting processes for third generation solar cellscitations
- 2012Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantationcitations
- 2012Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Materialcitations
Places of action
| Organizations | Location | People |
|---|