693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hayne, Manus
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Defect formation in InGaAs/AlSb/InAs memory devices
- 2021Dilute Nitride GaInNAsSb for Next Generation Optical Communications
- 2021Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memorycitations
- 2020Experimental and theoretical determination of the transport properties of n-AlxGa1-xSb/GaSb
- 2019Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cellscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dotscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2015Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depthscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.
- 2008Classification and control of the origin of photoluminescence from Si nanocrystals.citations
- 2003Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
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