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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Niwa, M.
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article
Pulsed-laser deposition of superconducting LiTi<sub>2</sub>O<sub>4</sub> ultrathin films
Abstract
We report epitaxial growth, structural characterizations and thickness-dependent superconducting properties of LiTi<sub>2</sub>O<sub>4</sub> films grown on (111) MgAl<sub>2</sub>O<sub>4</sub> substrates by using pulsed-laser deposition. The variations of growth temperature (<i>T</i><sub>g</sub>) and excess Li composition of target materials were found to be crucial for improving the crystallinity, as verified by X-ray diffraction rocking curve and the in-plane domain configuration. The crystallinity of the desired LiTi<sub>2</sub>O<sub>4</sub> phase improved with increasing <i>T</i><sub>g</sub>, whereas the inclusion of Li-deficient phases became more significant due to high sublimation rate of Li species. The use of the excess Li targets allowed us to elevate <i>T</i><sub>g</sub> up to 750 °C (Li/Ti=1.0) with keeping high crystallinity and phase purity. For films grown under the best condition, the superconducting transition was observed near 12 K even when thickness was as thin as 9 nm.