• Bishop, S. G.
• Cannon, J. K.
• Pugliese, V.
• Bennett, Anthony
• Nieto Hernández, E.
• Hadden, J.
• Forneris, J.
• Olivero, P.
• Aprà, P.
• Yagci, H. B.
• Ditalia Tchernij, S.

Abstract

Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III-nitrides have previously been shown to host efficient SPEs, which are attributed to deep energy levels within the large bandgap of the material, in a configuration that is similar to extensively investigated color centers in diamond. Anti-bunched emission from defect centers within gallium nitride and aluminum nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in the creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters and open enticing perspectives in the defect engineering of SPEs in solid state.

Topics

• density
• impedance spectroscopy
• aluminium
• nitride
• forming
• annealing
• Gallium
• vacancy
• confocal microscopy