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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bennett, Anthony
Cardiff University
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article
Room-temperature quantum emitter in aluminum nitride
Abstract
A device that is able to produce single photons is a 5 fundamental building block for a number of quantum technologies. 6 Significant progress has been made in engineering quantum emission in 7 the solid state, for instance, using semiconductor quantum dots as well 8 as defect sites in bulk and two-dimensional materials. Here we report 9 the discovery of a room-temperature quantum emitter embedded deep 10 within the band gap of aluminum nitride (AlN). Using spectral, 11 polarization, and photon-counting time-resolved measurements we 12 demonstrate bright (>105 counts s−1), pure (g2(0) < 0.2), and polarized 13 room-temperature quantum light emission from color centers in this 14 commercially important semiconductor.