| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Šikola, Tomáš
Brno University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Influence of Deposition Parameters on the Plasmonic Properties of Gold Nanoantennas Fabricated by Focused Ion Beam Lithographycitations
- 2024Efficient nanoscale imaging of solid-state phase transitions by transmission electron microscopy demonstrated on vanadium dioxide nanoparticles
- 2023A tag-and-count approach for quantifying surface silanol densities on fused silica based on atomic layer deposition and high-sensitivity low-energy ion scatteringcitations
- 2022Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ionscitations
- 2021Plasmonic Metasurface Resonators to Enhance Terahertz Magnetic Fields for High‐Frequency Electron Paramagnetic Resonancecitations
- 2021Kinetics of guided growth of horizontal gan nanowires on flat and faceted sapphire surfacescitations
- 2021Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfacescitations
- 2020Single-layer graphene on epitaxial FeRh thin filmscitations
- 2020Quantitative analysis of calcium and fluorine by high-sensitivity low-energy ion scattering:Calcium fluoridecitations
Places of action
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article
Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions
Abstract
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures.