| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sobola, Dinara
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2024Analysis of processing efficiency, surface, and bulk chemistry, and nanomechanical properties of the Monel<sup>®</sup> alloy 400 after ultrashort pulsed laser ablationcitations
- 2024Optical Properties of Yttrium Ferrite Films Prepared by Pulse Laser Deposition
- 2024Characterization of field emission from oxidized copper emitterscitations
- 2024Optical Properties of YttriumOrthoferrite Films Prepared by PlasmaLaser Deposition
- 2024Optical and electrical performance of translucent BaTiO3-BaSnO3 ceramicscitations
- 2024Comprehensive analysis of charge carriers dynamics through the honeycomb structure of graphite thin films and polymer graphite with applications in cold field emission and scanning tunneling microscopycitations
- 2024Analysis of processing efficiency, surface, and bulk chemistry, and nanomechanical properties of the Monel® alloy 400 after ultrashort pulsed laser ablationcitations
- 2024Field Ion Microscopy of Tungsten Nano-Tips Coated with Thin Layer of the EpoxyResin
- 2023Exploring the Piezoelectric Properties of Bismuth Ferrite Thin Films Using Piezoelectric Force Microscopy: A Case Studycitations
- 2023Piezo-Enhanced Photocatalytic Activity of the Electrospun Fibrous Magnetic PVDF/BiFeO3 Membranecitations
- 2023Electrical characteristics of different concentration of silica nanoparticles embedded in epoxy resincitations
- 2022Nanoscale surface dynamics of RF-magnetron sputtered CrCoCuFeNi high entropy alloy thin filmscitations
- 2022Nanoscale surface dynamics of RF-magnetron sputtered CrCoCuFeNi high entropy alloy thin filmscitations
- 2022Characterization and Evaluation of Engineered Coating Techniques for Different Cutting Tools - Reviewcitations
- 2022Characterization and Evaluation of Engineered Coating Techniques for Different Cutting Tools-Reviewcitations
- 2022Advances in sustainable grinding of different types of the titanium biomaterials for medical applicationscitations
- 2022Multiferroic/Polymer Flexible Structures Obtained by Atomic Layer Depositioncitations
- 2022Morphotropic Phase Boundary Enhanced Photocatalysis in Sm Doped BiFeO3citations
- 2021PVDF Fibers Modification by Nitrate Salts Dopingcitations
- 2021Case Study of Polyvinylidene Fluoride Doping by Carbon Nanotubescitations
- 2021Morphological features in aluminum nitride epilayers prepared by magnetron sputtering ; Morfologické detaily v AlN epivrstvách připravených magnetronovým napařovánímcitations
- 2021Characterization of Polyvinylidene Fluoride (PVDF) Electrospun Fibers Doped by Carbon Flakescitations
- 2021Field emission properties of polymer graphite tips prepared by membrane electrochemical etchingcitations
- 2020Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy ; Použitá sondového rastrovacího mikroskopu pro studium tenkých vrstev karbidu křemíku a nitridu hliníku vyrobených rychlou sublimační epitaxí
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article
Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy ; Použitá sondového rastrovacího mikroskopu pro studium tenkých vrstev karbidu křemíku a nitridu hliníku vyrobených rychlou sublimační epitaxí
Abstract
The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution. ; Cílem studie je růst struktur SiC/(SiC)1-x(AlN)x pomocí rychlé sublimační epitaxe polykrystalického zdroje (SiC)1-x(AlN)x a jejich charakterizace pomocí SEM a AFM. K dosažrení tohoto cíle bylo třeba stanovit optimální podmínky. Vyrobené struktury by mohly být použity jako polovodiče s širokým zakázaným pásem. Výsledky analýzy ukazují, že v důeeldku zvyšování teploty až do 2300 K The result of analysis shows that increasing of the growth temperature up to 2300 K umožní provést sublimační epitaxi tenkých vrstev AlN a jeho tuhého roztoku.