| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Mcmitchell, Sean R. C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges
- 2020Ferroelectricity in si-doped hafnia: Probing challenges in absence of screening chargescitations
- 2014Optimal growth and thermal stability of crystalline Be0.25Zn0.75O alloy films on Al2O3 (0001)
- 2014Optimal growth and thermal stability of crystalline Be0.25Zn0.75O alloy films on Al 2 O 3 (0001)citations
- 2014Pinning effect on the band gap modulation of crystalline BexZn1−xO alloy films grown on Al2O3 (0001)citations
- 2014Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111)citations
- 2014Pinning effect on the band gap modulation of crystalline Be x Zn 1 - x O alloy films grown on Al 2 O 3 (0001)
- 2012Artificial construction of the layered Ruddlesden–Popper Manganite La2Sr2Mn3O10by reflection high energy electron diffraction monitored pulsed laser deposition
- 2009High permittivity SrHf0.5Ti0.5O3 films grown by pulsed laser deposition
- 2009High permittivity SrHf[sub 0.5]Ti[sub 0.5]O[sub 3] films grown by pulsed laser deposition
Places of action
| Organizations | Location | People |
|---|
article
High permittivity SrHf[sub 0.5]Ti[sub 0.5]O[sub 3] films grown by pulsed laser deposition
Abstract
High permittivity SrHf0.5Ti0.5O3 films (k = 62.8) have been deposited on (001) Nb–SrTiO3 single crystal conducting substrates by pulsed laser deposition. The SrHf0.5Ti0.5O3 films grow epitaxially with atomically smooth surfaces (root mean square roughness 4.8 Å) and a c-axis orientation parallel to the substrate. The measured band gap of SrHf0.5Ti0.5O3 is 3.47 eV compared with 3.15 eV in SrTiO3. Under an applied electric field of 600 kV/cm, the leakage current density of the SrHf0.5Ti0.5O3 films is 4.63×10−4 A/cm2. These attractive dielectric properties and enhanced band gap values make SrHf0.5Ti0.5O3 a promising candidate for high-k dielectric applications in silicon-based integrated circuits.