| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mcmitchell, Sean R. C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges
- 2020Ferroelectricity in si-doped hafnia: Probing challenges in absence of screening chargescitations
- 2014Optimal growth and thermal stability of crystalline Be0.25Zn0.75O alloy films on Al2O3 (0001)
- 2014Optimal growth and thermal stability of crystalline Be0.25Zn0.75O alloy films on Al 2 O 3 (0001)citations
- 2014Pinning effect on the band gap modulation of crystalline BexZn1−xO alloy films grown on Al2O3 (0001)citations
- 2014Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111)citations
- 2014Pinning effect on the band gap modulation of crystalline Be x Zn 1 - x O alloy films grown on Al 2 O 3 (0001)
- 2012Artificial construction of the layered Ruddlesden–Popper Manganite La2Sr2Mn3O10by reflection high energy electron diffraction monitored pulsed laser deposition
- 2009High permittivity SrHf0.5Ti0.5O3 films grown by pulsed laser deposition
- 2009High permittivity SrHf[sub 0.5]Ti[sub 0.5]O[sub 3] films grown by pulsed laser deposition
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article
Pinning effect on the band gap modulation of crystalline Be x Zn 1 - x O alloy films grown on Al 2 O 3 (0001)
Abstract
We have investigated the influence of Be concentration on the microstructure of Be x Zn 1−x O ternary films (from x = 0 to 0.77), grown on Al 2 O 3 (0001) substrates using radio-frequency co-sputtering. With increasing Be concentration, the (0002) X-ray diffraction peak shows a systematic shift from 33.86° to 39.39°, and optical spectroscopy shows a blue-shift of the band gap from 3.24 to beyond 4.62 eV towards the deep UV regime, indicating that Be atoms are incorporated into the host ZnO lattice. During the band-gap modulation, structural fluctuations (e.g. phase separation and compositional fluctuation of Be) in the ternary films were observed along with a significant change in the mean grain size. X-ray photoelectron spectroscopy indicates higher concentrations of metallic Be states found in the film with the smaller grain size. Correlation between these two observations indicates that Be segregates to near grain boundaries. A model structure is proposed through simulation, where an increase in grain growth driving force dominates over the Be particle pinning effect. This leads to further coalescence of grains, reactivation of grain growth, and the uniform distribution of Be composition in the Be x Zn 1−x O alloy films.