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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Levallois, Christophe
Institut National des Sciences Appliquées de Rennes
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Photoelectrode/Electrolyte interfacial band lineup engineering with alloyed III-V thin films grown on Si substrate.citations
- 2023Mechanical and optical properties of amorphous silicon nitride-based films prepared by electron cyclotron resonance plasma-enhanced chemical vapor depositioncitations
- 2022Low-temperature spatially-resolved luminescence spectroscopy of microstructures with strained III-V quantum wells
- 2022Strain engineering in III-V photonic components through structuration of SiN x filmscitations
- 2021III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production
- 2021Stress Engineering of Dielectric Films on Semiconductor Substrates
- 2021Mechanical and Optical Properties of Amorphous SiN-Based Films Prepared By ECR-PECVD and CCP-PECVD
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wellscitations
- 2021Mechanical strain mapping of GaAs based VCSELscitations
- 2020Random crystal polarity of Gallium phosphide microdisks on silicon
- 2020Photoluminescence mapping of the strain induced in InP and GaAs substrates by SiN stripes etched from thin films grown under controlled mechanical stresscitations
- 2019Towards MIR VCSELs operating in CW at RT
- 2019Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizations
- 2019Photoelectrochemical water oxidation of GaP 1−x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvestingcitations
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2019GaPSb/Si photoelectrode for Solar Fuel Production
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Excitons bounded around In-rich antiphase boundaries
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Chapter 28 - GaP/Si-Based Photovoltaic Devices Grown by Molecular Beam Epitaxycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2016Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias
- 2016Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias
- 2016Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wellscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2014Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaicscitations
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
Places of action
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document
Enhancement of VCSEL performances using a novel bonding process based on localized electroplating copper through Silicon vias
Abstract
The development of power efficient vertical-cavity surface-emitting lasers (VCSELs) in the 1.55µm range, with relatively high output power (>1mW) and enhanced thermal dissipation is still challenging, but would represent a real breakthrough for the scientific community, with important perspectives in different areas of fundamental research and applied physics (WDM and FTTH networks, gas sensing and deformation detectors, microwaves, etc.). In this context, a novel bonding technique is presented in this work. It relies on the use of a BCB polymer bonding to virtually report any material on a Si host platform, through the use of Cu-filled vias acting as µ-heat sinks. This so-called Through Silicon Holes Electroplated Copper (TSHEC) technique has undoubtedly several advantages, since it allows a hybrid integration of III-V active regions on a Si substrate (for photonics, microelectronics, microfluidics integration), it avoids stress-induced limitation with respect of standard large Cu surface solutions, and it is cost-effective. Moreover, it is fully compatible with optical pumping as well as electrical injection schemes. This approach has been recently validated in the case of InP-based OP-VCSEL structures, for which an emission power exceeding 2mW with a threshold as low as 7mW at 20°C has been demonstrated, in the case of a bottom hybrid metal-dielectric Bragg mirror (H-DBR) of 20µm in diameter. Different diameter sizes for the bottom H-DBR have been tested, ranging from 20µm up to 100µm. According to the size of the H-DBR, different values for the output power have been measured, together with a red shift of the laser emission, which are related to different values for the thermal impedance of the devices.