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Borysiewicz, Michał A.
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article
Application of ZnO to passivate the GaN-based device structures
Abstract
<p>The fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si<sub>3</sub>N <sub>4</sub> films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT. © 2008 Materials Research Society.</p>