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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jacob, M. V.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2008Microwave Characterisation of MgTe2O5 using quasi TE0np Mode Dielectric Resonator Technique
- 2008Bi-2(Zn2/3-x/3Nb4/3-2x/3Tix)O-7 Ceramics - A High Permittivity Microwave Dielectrics for Electronics Application
- 2007Non-destructive complex permittivity measurement of low permittivity thin film materialscitations
- 2006Cryogenic complex anisotropic permittivity of magnesium fluoridecitations
- 2006Dielectric characterisation of Barium Fluoride at cryogenic temperatures using TE011 and quasi TE0mn mode dielectric resonatorscitations
- 2005Low temperature complex permittivity of MgF/sub 2/ at microwave frequencies from TE/sub 01/spl delta// modescitations
- 2004Recent advances in measurements of permittivity and dielectric losses at microwave frequenciescitations
- 2004Microwave characterization of (La,Sr)(AlTa)O3 using TE011 mode dielectric resonator
- 2003Lithium tantalate - a high permittivity dielectric material for microwave communication systemscitations
- 2003Microwave characterisation of CaF2 at cryogenic temperatures using a dielectric resonator techniquecitations
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article
Microwave characterization of (La,Sr)(AlTa)O3 using TE011 mode dielectric resonator
Abstract
The permittivity and loss tangent of a dielectric material can be estimated from precise measurement data of the Q-factor and resonant frequency of a dielectric resonator containing the material under test. We have characterized an (La,Sr)(AI,Ta)O, (LSAT) single crystal of the cylindrical shape using TE011 mode dielectric resonator in two enclosures at a frequency of 15.5 GHz at temperatures from 15 K to 293 K and an LSAT planar sample at 9.7 GHz using a post cryogenic TEo1, resonator. Our measurements have shown that permittivity of LSAT is in the vicinity of23 and exhibits a peak at temperature of 190 K. We have also studied the temperature coefficient of frequency of the LSAT substrate. Due to the weaker temperature dependence of permittivity of LSAT substrates, HTS devices and circuits fabricated on LSAT can be more stable than on Lanthanum Aluminate.