| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Berbezier, Isabelle
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2021Implementation of Nanoscale Secondary‐Ion Mass Spectrometry Analyses: Application to Ni‐Based Superalloyscitations
- 2019Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
- 2019Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regimecitations
- 2019High graphene permeability for room temperature silicon deposition: The role of defectscitations
- 2017Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensationcitations
- 2017Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitecturescitations
- 2017Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopycitations
- 2017Contacting of Si/SiO2 core/shell nanowires using laser photolithography
- 2016Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometrycitations
- 2016van der Waals Heteroepitaxy of Germanene Islands on Graphitecitations
- 2016van der Waals Heteroepitaxy of Germanene Islands on Graphitecitations
- 2016Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewettingcitations
- 2015Kinetics and Energetics of Ge Condensation in SiGe Oxidationcitations
- 2014Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxycitations
- 2013Ultimate nanopatterning of Si substrate using filtered liquid metal alloy ion source-focused ion beamcitations
- 2013Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin filmscitations
- 2012Design of free patterns of nanocrystals with ad hoc features via templated dewettingcitations
- 2012The kinetics of dewetting ultra-thin Si layers from silicon dioxidecitations
- 2011In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beamcitations
- 2011Vapor–solid–solid growth of Ge nanowires from GeMn solid cluster seedscitations
- 2011Mn5Ge3 films grown on Ge(1 1 1)-c(2 × 8)citations
- 2010Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structurescitations
- 2007Structural and magnetic properties of Mn5Ge3 nanoclusters dispersed in MnxGe1−x/Ge(0 0 1)2 × 1 diluted magnetic semiconductorscitations
- 2006Structural and magnetic properties of GeMn diluted magnetic semiconductorcitations
- 2006Structural and magnetic properties of GeMn diluted magnetic semiconductorcitations
- 2002Sb-surfactant mediated growth of Ge nanostructures
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article
Sb-surfactant mediated growth of Ge nanostructures
Abstract
This paper reports the AFM and HREM study of the Sb surfactant mediated growth of Ge on Si(0 0 1). We show that very dense self-organised Ge dots of small lateral dimensions can be grown by using a sub-monolayer coverage of Sb on Si(0 0 1) in the transient growth regime between 2D nucleation and step flow. The dramatic Ge growth change induced by Sb is attributed to both kinetic and thermodynamic effects. Indeed, HREM observations evidence mainly two phenomena: the close-packing of ultra-small Ge islands indicating a lower surface diffusion in presence of Sb and a mono-modal island shape and size that strongly differs from the bimodal islands 'huts' and 'domes' commonly observed without Sb. Morphological and microstructural features of Ge islands formed with and without Sb are studied and the differences between facets and aspect ratio are exhibited. Moreover, at lower growth temperature (in the 2D nucleation regime, T g 0 350°C), a delay to 3D island nucleation is observed and defect free 2D flat layers can be grown up to thicknesses of 18 A ,. At higher growth temperature, (in pure step flow at T g 750°C) large, well separated 'dome' islands partially relaxed by dislocation nucleation on their edges are obtained. Such islands are very similar to those obtained without Sb coverage. The complete desorption of Sb on Ge rich surface at T\ 720°C explains this result. This study which improves the understanding on the formation of ultra-small dense islands is very promising for the fabrication of quantum devices that require highly homogeneous islands of small lateral sizes and of MOSFET heterostructures with strained SiGe n-channel which require flat Ge rich layers with abrupt interfaces.