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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Palmstrøm, C. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2021Parity-preserving and magnetic field–resilient superconductivity in InSb nanowires with Sn shellscitations
- 2021Parity-preserving and magnetic field–resilient superconductivity in InSb nanowires with Sn shellscitations
- 2020Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells
- 2018Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transitioncitations
- 2016Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin filmscitations
- 2015Anisotropic spin relaxation in $n$-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nucleicitations
- 2014Tuning spin orbit interaction in high quality gate-defined InAs one-dimensional channels
- 2012Planar Superconducting Resonators with Internal Quality Factors above One Millioncitations
- 2011Martensite transformation of epitaxial Ni-Ti filmscitations
- 2000Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayerscitations
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report
Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells
Abstract
We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. Superconductivity persists up to 4 T in magnetic field. A tin island exhibits the coveted two-electron charging effect, a hallmark of charge parity stability. The findings open avenues for superconducting and topological quantum circuits based on new superconductor-semiconductor combinations.