| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cecchini, Raimondo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Glassy Synaptic Time Dynamics in Molecular La0.7Sr0.3MnO/Gaq3/AlOx/Co Spintronic Crossbar Devicescitations
- 2021Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Siliconcitations
- 2021Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
- 2021Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Depositioncitations
- 2021Large-Area {MOVPE} Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)citations
- 2019High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growthcitations
- 2018Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVDcitations
- 2018Oxygen impurities link bistability and magnetoresistance in organic spin valvescitations
- 2010Fabrication of nanopatterned metal layers on silicon by nanoindentation/nanoscratching and electrodepositioncitations
Places of action
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document
Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
Abstract
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length IEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.