| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Parish, James
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Multi-pulse atomic layer deposition of p-type SnO thin filmscitations
- 2021Evaluation of Sn(II) Aminoalkoxide Precursors for Atomic Layer Deposition of SnO Thin Films.citations
- 2021Tin(II) Ureide Complexescitations
- 2021Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Synthetic, Structural and Computational Studies on Heavier Tetragen and Chalcogen Triazenide Complexescitations
- 2018Synthesis, Characterisation and Thermal Properties of Sn(II) Pyrrolide Complexescitations
- 2018Recent developments in molecular precursors for atomic layer depositioncitations
- 2017Aerosol-Assisted chemical vapor deposition of cds from xanthate single source precursorscitations
- 2016Aerosol-assisted CVD of SnO from stannous alkoxide precursorscitations
Places of action
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patent
Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
Abstract
The present invention relates to the use of a M (II) primary precursor of formula (I): M(OCR1R2R3)L (I) wherein: M is Sn or Ge or Pb; L is a ligand displaying ALD reactivity for a secondary precursor; R1, R2, and R3 are each independently selected from: H or a linear or branched alkyl groups, and wherein at least one of R1, R2, and R3 is a linear or branched alkyl group, or an adduct of a metal (M) (II) precursor of formula (I), in the atomic layer deposition (ALD) of a M (II), M (0), or a M (IV) containing film layer on a substrate. Preferably, the compound of formula (I) is [Sn(OiPr)2], [Sn(OtBu)2]2, [Sn{OCH(Me)CH(Me)2}2], [Sn{OC(Me)2CH2Me}2] or Sn(dmamp)2 where dmamp is 2-dimethylamino-2-methylpropanol.