| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Shields, Philip, A.
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxycitations
- 2023Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxycitations
- 2022Etching of the SiGaxN yPassivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core-Shell Nanowires by MOVPEcitations
- 2021Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowirescitations
- 2021Point Defects in InGaN/GaN Core-Shell Nanorodscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrayscitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2013Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxycitations
- 2012Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPEcitations
- 2011Advances in nano-enabled GaN photonic devices
- 2009Enhanced light extraction by photonic quasi-crystals in GaN blue LEDscitations
- 2007Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy
Places of action
| Organizations | Location | People |
|---|
article
Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy
Abstract
A mixed pulsed and normal GaN epitaxial lateral overgrowth (ELO-GaN) by epitaxy metalorganic vapour phase epitaxy (MOVPE) is reported in this study. Monitoring by using an in situ spectroscopic reflectometer has shown that a varying vertical growth rate during the pulsed growth was observed as in the normal ELO-GaN growth process, however, the growth rate was dramatically reduced in pulsed growth. Cross-section scanning electron microscope (SEM) images have shown that a lateral to vertical growth ratio (LTVGR) of 7 was obtained under a set of growth conditions on a template with a GaN trench and SiO2 mask width of 5 and 15 mu m, respectively, and with the stripes aligned in the GaN < 1 1 0 0 > crystallographic direction. Two types of growth instability associated with pulsed growth were observed under some growth conditions-One, is the formation of large steps on the ELO-GaN stripes before coalescence; the other is the,formation of hexagonal pyramids on the coalesced surface. The origin of pyramidal formation was found exactly on the coalescence boundaries. A mixed pulsed and normal ELO-GaN growth technique has been established to eliminate the large steps, and formation of pyramids can be avoided by switching to normal growth conditions before ELO-GaN stripes coalesce. The thickness of ELO-GaN has been successfully controlled below 1 mu m before coalescence, and below 3 mu m for a fully coalesced ELO-GaN film by this technique. Atomic force microscope (AFM) has confirmed that ELO-GaN films grown by this technique are of high structural quality. (c) 2006 Elsevier B.V. All rights reserved.