Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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693.932 PEOPLE
693.932 People People

693.932 People

Show results for 693.932 people that are selected by your search filters.

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Joyce, H. J.

  • Google
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (7/7 displayed)

  • 2017On-Chip Andreev Devices: Hard Superconducting Gap and Quantum Transport in Ballistic Nb-In0.75 Ga0.25 As-Quantum-Well-Nb Josephson Junctionscitations
  • 2017The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors17citations
  • 2011III-V compound semiconductor nanowires for optoelectronic device applications1citations
  • 2009III-V compound semiconductor nanowirescitations
  • 2009III-V compound semiconductor nanowires3citations
  • 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devicescitations
  • 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devicescitations

Places of action

Chart of shared publication
Puddy, R. K.
1 / 1 shared
Gul, Y.
1 / 3 shared
Ritchie, D. A.
1 / 18 shared
Farrer, I.
1 / 22 shared
Cao, M.
1 / 6 shared
Smith, C. G.
1 / 1 shared
Kelly, M. J.
1 / 1 shared
Delfanazari, K.
1 / 4 shared
Yi, T.
1 / 2 shared
Ma, P.
1 / 4 shared
Micolich, A. P.
1 / 1 shared
Ullah, A. R.
1 / 1 shared
Kang, J. H.
1 / 2 shared
Jackson, H. E.
5 / 16 shared
Gao, Q.
5 / 22 shared
Yarrison-Rice, J. M.
5 / 7 shared
Paiman, S.
5 / 10 shared
Smith, L. M.
5 / 15 shared
Zou, J.
3 / 17 shared
Kim, Y.
5 / 16 shared
Zou, Jin
2 / 26 shared
Jagadish, C.
2 / 23 shared
Tan, H. Hoe
2 / 4 shared
Zhang, X.
4 / 65 shared
Chart of publication period
2017
2011
2009

Co-Authors (by relevance)

  • Puddy, R. K.
  • Gul, Y.
  • Ritchie, D. A.
  • Farrer, I.
  • Cao, M.
  • Smith, C. G.
  • Kelly, M. J.
  • Delfanazari, K.
  • Yi, T.
  • Ma, P.
  • Micolich, A. P.
  • Ullah, A. R.
  • Kang, J. H.
  • Jackson, H. E.
  • Gao, Q.
  • Yarrison-Rice, J. M.
  • Paiman, S.
  • Smith, L. M.
  • Zou, J.
  • Kim, Y.
  • Zou, Jin
  • Jagadish, C.
  • Tan, H. Hoe
  • Zhang, X.
OrganizationsLocationPeople

document

III-V compound semiconductor nanowires

  • Zou, Jin
  • Jagadish, C.
  • Jackson, H. E.
  • Tan, H. Hoe
  • Gao, Q.
  • Joyce, H. J.
  • Yarrison-Rice, J. M.
  • Paiman, S.
  • Smith, L. M.
  • Zhang, X.
  • Kim, Y.
Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

Topics
  • nanoparticle
  • compound
  • semiconductor
  • defect
  • chemical vapor deposition