693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zou, Jin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2022TiB reinforced lattice structures produced by laser powder bed fusion with high elastic admissible straincitations
- 2022High strength and ductility of titanium matrix composites by nanoscale design in selective laser meltingcitations
- 2020Tib nanowhisker reinforced titanium matrix composite with improved hardness for biomedical applicationscitations
- 2018Continuous flow synthesis of phosphate binding h-BN@magnetite hybrid materialcitations
- 2015Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powderscitations
- 2011Superstructure formation and variation in Ni-GDC cermet anodes in SOFCcitations
- 2011Direct evidence of dopant segregation in Gd-doped ceriacitations
- 2011The diffusions and associated interfacial layer formation between thin film electrolyte and cermet anode in IT-SOFCcitations
- 2011Diffusion and segregation along grain boundary at the electrolyte–anode interface in IT-SOFCcitations
- 2011Two types of diffusions at the cathode/electrolyte interface in IT-SOFCscitations
- 2011Compound semiconductor nanowires for optoelectronic device applications
- 2011Mutual diffusion occurring at the interface between La0.6Sr0.4Co0.8Fe0.2O3 cathode and Gd-doped ceria electrolyte during IT-SOFC cell preparationcitations
- 2011Mutual diffusion and microstructure evolution at the electrolyte−anode interface in intermediate temperature solid oxide fuel cellcitations
- 2011Growth and properties of III-V compound semiconductor heterostructure nanowirescitations
- 2011III-V semiconductor nanowires for optoelectronic device applicationscitations
- 2010Microstructural and chemical aspects of working-temperature aged Ca-doped CeO2citations
- 2009Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures
- 2009III-V compound semiconductor nanowires
- 2009Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructurescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2008High purity GaAs nanowires free of planar defectscitations
- 2003Multilayered carbon films for tribological applicationscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaNcitations
- 2000Ion-beam-induced dissociation and bubble formation in GaNcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
Places of action
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document
III-V compound semiconductor nanowires
Abstract
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.