Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (10/10 displayed)

  • 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin filmscitations
  • 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substrates14citations
  • 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopy7citations
  • 2016In-vacuo growth studies of ZrO2 thin filmscitations
  • 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridation12citations
  • 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)citations
  • 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin films12citations
  • 2013Engineering optical constants for broadband single layer anti-reflection coatingscitations
  • 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealingcitations
  • 2012Multilayer development for the generation beyond EUV: 6.x nmcitations

Places of action

Chart of shared publication
Sturm, Jacobus
5 / 8 shared
Ribera, Roger Coloma
3 / 5 shared
Yakshin, Andrey
6 / 7 shared
Van De Kruijs, Robbert
9 / 22 shared
Ten Elshof, Johan E.
1 / 11 shared
Bayraktar, Muharrem
1 / 3 shared
Rijnders, Guus
1 / 20 shared
Nijland, Maarten
1 / 3 shared
Chopra, A.
1 / 1 shared
Gullikson, E.
2 / 3 shared
Edgar, J. H.
2 / 5 shared
Frye, C. D.
1 / 1 shared
Prendergast, D.
2 / 3 shared
Meyer-Ilse, J.
2 / 2 shared
Huber, Sebastiaan
3 / 3 shared
Kuznetsov, Dmitry
1 / 1 shared
Medvedev, Viacheslav
1 / 2 shared
Padavala, B.
1 / 1 shared
Zoethout, E.
2 / 6 shared
Nyabero, S. L.
1 / 1 shared
Louis, Eric
1 / 4 shared
Makhotkin, Igor Alexandrovich
1 / 1 shared
Muellender, S.
1 / 1 shared
Yakunin, A. M.
1 / 1 shared
Chart of publication period
2017
2016
2013
2012

Co-Authors (by relevance)

  • Sturm, Jacobus
  • Ribera, Roger Coloma
  • Yakshin, Andrey
  • Van De Kruijs, Robbert
  • Ten Elshof, Johan E.
  • Bayraktar, Muharrem
  • Rijnders, Guus
  • Nijland, Maarten
  • Chopra, A.
  • Gullikson, E.
  • Edgar, J. H.
  • Frye, C. D.
  • Prendergast, D.
  • Meyer-Ilse, J.
  • Huber, Sebastiaan
  • Kuznetsov, Dmitry
  • Medvedev, Viacheslav
  • Padavala, B.
  • Zoethout, E.
  • Nyabero, S. L.
  • Louis, Eric
  • Makhotkin, Igor Alexandrovich
  • Muellender, S.
  • Yakunin, A. M.
OrganizationsLocationPeople

document

Multilayer development for the generation beyond EUV: 6.x nm

  • Louis, Eric
  • Makhotkin, Igor Alexandrovich
  • Muellender, S.
  • Yakunin, A. M.
  • Van De Kruijs, Robbert
  • Bijkerk, Frederik
  • Zoethout, E.
Abstract

Radiation of 6.x nm wavelength is a possible candidate for the next generation of optical lithography aiming at sub 8 nm resolution in single exposure. Construction of multilayer optics based on La and B remains a challenge due to a stronger requirement for layer thickness and interface roughness. The main challenge is to prevent intermixing of the multilayer materials, particularly since individual layer thicknesses (~1.5 nm) are in the same range as the naturally formed compounded interfaces. In recent research we have shown that the formation of La-nitride by N-ion treatment of the La layers reduces compound formation, providing a better optical contrast, thus leading to an increase of the multilayer mirror reflectivity. We also argue that LaN is optically preferred over pure La. Mirrors for 6.x nm require more than 150 periods for a maximum theoretical peak reflectance of 78% for an ideal structure. To deposit such an amount of periods the deposition technique is being optimized. A first optimization of the deposition process has enabled full stack (150 periods) LaN/B4C multilayer mirror samples yielding 47.2% reflectivity at l=6.63 nm (Fig. 1) at near normal incidence. Further optimization of the deposition and nitridation technique is planned aiming to further reduce interface compound formation and roughness value. First of all the magnetron plasma should be optimized in order maximize plasma ion polishing effects and minimize layers intermixture induced by high energy ions and neutrals. Further interface roughness reduction can be achieved by tuning the energy of the atoms being deposited and by low energy ion treatment of the deposited layers

Topics
  • Deposition
  • impedance spectroscopy
  • compound
  • nitride
  • lithography
  • polishing