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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bijkerk, Frederik
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017Tuning of large piezoelectric response in nanosheet-buffered lead zirconate titanate films on glass substratescitations
- 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopycitations
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
- 2013Engineering optical constants for broadband single layer anti-reflection coatings
- 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
- 2012Multilayer development for the generation beyond EUV: 6.x nm
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document
Multilayer development for the generation beyond EUV: 6.x nm
Abstract
Radiation of 6.x nm wavelength is a possible candidate for the next generation of optical lithography aiming at sub 8 nm resolution in single exposure. Construction of multilayer optics based on La and B remains a challenge due to a stronger requirement for layer thickness and interface roughness. The main challenge is to prevent intermixing of the multilayer materials, particularly since individual layer thicknesses (~1.5 nm) are in the same range as the naturally formed compounded interfaces. In recent research we have shown that the formation of La-nitride by N-ion treatment of the La layers reduces compound formation, providing a better optical contrast, thus leading to an increase of the multilayer mirror reflectivity. We also argue that LaN is optically preferred over pure La. Mirrors for 6.x nm require more than 150 periods for a maximum theoretical peak reflectance of 78% for an ideal structure. To deposit such an amount of periods the deposition technique is being optimized. A first optimization of the deposition process has enabled full stack (150 periods) LaN/B4C multilayer mirror samples yielding 47.2% reflectivity at l=6.63 nm (Fig. 1) at near normal incidence. Further optimization of the deposition and nitridation technique is planned aiming to further reduce interface compound formation and roughness value. First of all the magnetron plasma should be optimized in order maximize plasma ion polishing effects and minimize layers intermixture induced by high energy ions and neutrals. Further interface roughness reduction can be achieved by tuning the energy of the atoms being deposited and by low energy ion treatment of the deposited layers