| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Van De Kruijs, Robbert
University of Twente
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Structural pathways for ultrafast melting of optically excited thin polycrystalline Palladium filmscitations
- 2024Oxidation of thin film binary entropy alloys
- 2022Relation between composition and fracture strength in off-stoichiometric metal silicide free-standing membranescitations
- 2022Fracture Toughness of Free-Standing ZrSiₓ Thin Films Measured Using Crack-on-a-Chip Methodcitations
- 2021Strengthening ultrathin Si3N4 membranes by compressive surface stresscitations
- 2021Hydrogen etch resistance of aluminium oxide passivated graphitic layerscitations
- 2018Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation thresholdcitations
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017In vacuo low-energy ions scattering studies of ZrO2 growth by magnetron sputtering
- 2017Detection of defect populations in superconductor boron subphosphide B12P2 through X-ray absorption spectroscopycitations
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
- 2015Determination of oxygen diffusion kinetics during thin film ruthenium oxidationcitations
- 2014Subwavelength single layer absorption resonance antireflection coatingscitations
- 2013Engineering optical constants for broadband single layer anti-reflection coatings
- 2012Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
- 2012Multilayer development for the generation beyond EUV: 6.x nm
- 2010Enhanced diffusion upon amorphous-to-nanocrystalline phase transition in Mo/B4C/Si layered systemscitations
- 2009In-depth agglomeration of d-metals at Si-on-Mo interfacescitations
- 2009Chemically mediated diffusion of d-metals and B through Si and agglomeration at Si-on-Mo interfacescitations
Places of action
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document
In vacuo low-energy ions scattering studies of ZrO2 growth by magnetron sputtering
Abstract
ZrO2 thin films have applications as dielectric or passivation layer in applications as CMOS gate dielectrics and Si solar cells. Furthermore, ZrO2 may be of interest as capping layer for protecting extreme ultraviolet (EUV) optics against chemical degradation processes. For these applications, it is critical that a homogeneous closed film is formed, which does not degrade the underneath layers, while the thickness is, depending on application, often restricted to a few nanometres. In this work, we studied the initial growth of ZrO2 films by reactive magnetron sputtering on top of amorphous Si (a-Si), SiNx and SiO2 by in vacuo low-energy ion scattering (LEIS). Since LEIS is selectively sensitive for the outermost atomic layer, it could be determined for which deposited thickness a closed layer was formed and how deposition parameters and surface passivation affect the sharpness of the ZrO2/Si interface. The information from surface peaks of Zr, O and the a-Si substrate was compared with the so-called tail signal from particles that scatter on sub-surface Zr atoms. As example, we studied representative conditions for metallic and oxidic mode reactive magnetron sputtering. In oxidic mode, where more high energy particles are present in the deposition plasma, 3.4 nm of ZrO2 was required to form a closed layer of ZrO2 on Si. In metallic mode, with a lower O to Ar ratio, intermixing could be reduced by a factor 2, such that a closed film of ZrO2 was formed at 1.7 nm deposited film thickness [1]. In-vacuo X-ray photoelectron spectroscopy (XPS) confirmed that the formation of Zr silicate at the ZrO2/Si interface was reduced in the case of metallic mode deposition. Passivation of Si by reactive deposition of a SiNx or SiO2 barrier layer between the ZrO2 and Si did not change the required ZrO2 thickness for forming a closed layer, most likely because the Zr silicate formed during deposition already passivates the Si substrate. Thermal annealing studies in ambient atmosphere showed that 2 nm ZrO2 layers deposited with metallic mode sputtering protects the underlying a-Si substrate against oxidation up to 400 °C.