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Nyabero, S. L.
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document
Chemical interactions at the interfaces of Mo/B4C/Si/B4C multilayers upon low-temperature annealing
Abstract
Interactions at interfaces in thin films and multilayers play an important role for present day nano-scaled devices. For example, reducing thermally induced interdiffusion between Mo and Si layers is a key challenge in developing Mo/Si multilayers as reflective coatings for projection lithography and free electron lasers. The introduction of thin B4C barrier layers, intended to reduce thermal damage, results in complex behavior under thermal loads. Using in-situ grazing incidence X-ray reflection measurements during sequential annealing, we resolve picometer changes in the multilayer structure, and link these changes to interactions of Mo and Si with the B4C layers, combined with molybdenum silicide formation with reduced formation rates.