| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sturm, Jacobus
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Publications (8/8 displayed)
- 2019Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensorcitations
- 2018Damage accumulation in thin ruthenium films induced by repetitive exposure to femtosecond XUV pulses below the single-shot ablation thresholdcitations
- 2017In-vacuo growth studies and thermal oxidation of ZrO2 thin films
- 2017In vacuo low-energy ions scattering studies of ZrO2 growth by magnetron sputtering
- 2016In-vacuo growth studies of ZrO2 thin films
- 2016Structure of high-reflectance La/B-based multilayer mirrors with partial La nitridationcitations
- 2016Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
- 2016Exploiting the P L2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin filmscitations
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document
Growth kinetics of Ru on Si, SiN and SiO2 studied by in-vacuo low energy ion scattering (LEIS)
Abstract
Thin ruthenium films are used in several applications such as catalysis, electronics and optical coatings. Due to its low-oxidation properties, Ru films are suitable as bottom electrodes in capacitors or as capping layer for extreme ultraviolet lithography optics. For both applications, it is important that the Ru layer is fully closed in order to prevent oxidation of the underlying material, which can cause a performance failure. We monitored magnetron sputter deposition of Ru on Si, SiNx and SiO2 thin films by in vacuo Low Energy Ion Scattering. On top of Si 4.4 nm of Ru is needed to close the layer, which is mainly attributed to interdiffusion. By passivating the Si with nitrogen or oxygen, the Ru thickness for closing the layer can be reduced to 3 nm or even 1.7 nm on SiNx or SiO2, respectively. The diffusion kinetics and in-depth diffusion profiles of Ru deposited on Si, SiNx and SiO2 have been derived.