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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Monroy, Eva
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Topics
Publications (17/17 displayed)
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2020Wurtzite quantum well structures under high pressurecitations
- 2018Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputteringcitations
- 2018Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer
- 2013Two-step method for the deposition of AlN by radio frequency sputteringcitations
- 2013Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cellscitations
- 2012Carrier localization in InN/InGaN multiple-quantum wells with high In-contentcitations
- 2010The microstructure and properties of InN layers
- 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
- 2010Extended defects in semipolar (1122) gallium nitride
- 2010Extended defects in semipolar (1122) gallium nitride
- 2009Strain relaxation in short-period polar GaN/AIN superlatticescitations
- 2008Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties
- 2006Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductorcitations
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article
The microstructure and properties of InN layers
Abstract
International audience ; A series of InN layers grown by different techniques has been investigated by transmission electron microscopy, photoluminescence and Raman spectroscopy. The polarity is shown to be determined by the underlying GaN template. In these In polar layers, the c-screw dislocations density is low and that of a-type dislocations is in the high-109 cm-2 range. The dislocation density tends to decrease towards the surface. Along the first 0.5 μm, and particularly in the samples grown by hydride vapour epitaxy, we observe a large number of stacking faults, which probably contribute to the dislocation density reduction. The optical band gap in MBE and MOVPE samples is between 0.6 and 0.7 eV, but that of the HVPE templates is above 1 eV. Estimations from Raman data show that this behaviour correlates well with the residual carrier concentration.