| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Monroy, Eva
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2020Wurtzite quantum well structures under high pressurecitations
- 2018Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputteringcitations
- 2018Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer
- 2013Two-step method for the deposition of AlN by radio frequency sputteringcitations
- 2013Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cellscitations
- 2012Carrier localization in InN/InGaN multiple-quantum wells with high In-contentcitations
- 2010The microstructure and properties of InN layers
- 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
- 2010Extended defects in semipolar (1122) gallium nitride
- 2010Extended defects in semipolar (1122) gallium nitride
- 2009Strain relaxation in short-period polar GaN/AIN superlatticescitations
- 2008Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties
- 2006Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductorcitations
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article
Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer
Abstract
Superconducting-nanowire single photon detectors (SNSPDs) are able to reach near-unity detection efficiency in the infrared spectral range. However, due to the intrinsic asymmetry of nanowires, SNSPDs are usually very sensitive to the polarization of the incident radiation, their responsivity being maximum for light polarized parallel to the nanowire length (transverse-electric (TE) polarization). Here, we report on the reduction of the polarization sensitivity obtained by capping NbN-based SNSPDs with a high-index SiNx dielectric layer, which reduces the permittivity mismatch between the NbN wire and the surrounding area. Experimentally, a polarization sensitivity below 0.1 is obtained both at 1.31 and 1.55 μm, in excellent agreement with simulations.