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Monroy, Eva
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Topics
Publications (17/17 displayed)
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2020Wurtzite quantum well structures under high pressurecitations
- 2018Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputteringcitations
- 2018Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer
- 2013Two-step method for the deposition of AlN by radio frequency sputteringcitations
- 2013Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cellscitations
- 2012Carrier localization in InN/InGaN multiple-quantum wells with high In-contentcitations
- 2010The microstructure and properties of InN layers
- 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
- 2010Extended defects in semipolar (1122) gallium nitride
- 2010Extended defects in semipolar (1122) gallium nitride
- 2009Strain relaxation in short-period polar GaN/AIN superlatticescitations
- 2008Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties
- 2006Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductorcitations
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document
Extended defects in semipolar (1122) gallium nitride
Abstract
Semipolar (1122 ) GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are studied by transmission electron microscopy (TEM). The layers exhibit numerous defects with different geometries in comparison to the growth along the c-axis, they are identified as mostly partial dislocations, basal and prismatic stacking faults. The dislocations density is in the order of 5x109 cm-2, the corresponding Burger vectors are b = 1/6 < 2023 >, b = 1/3 < 1010 > and a small fraction of perfect a type dislocations with b = 1/3 < 1120 > has been observed. The basal stacking fault density is in the order of 1x106 cm-1. In an attempt to reduce the defect density, SixNy interlayers have been used as nanomasks for epitaxial lateral overgrowth, our analysis shows that this leads to a quite small reduction of the defects as compared to the starting layer.