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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Figus, M. T.
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article
Formation and characterization of single crystal Ni2MnGa thin films
Abstract
<p>In this paper, molecular beam epitaxial growth of Ni<sub>2</sub>MnGa single crystal layers on GaAs (001) using a NiGa interlayer is reported. X-ray diffraction and transmission electron microscopy confirmed an epitaxial relationship of Ni<sub>2</sub>MnGa [100][010] // GaAs [100][010] and a tetragonal structure of the film (a = b = 5.79 angstrom, c = 6.07 angstrom). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers revealed an in-plane magnetization of approx. 200 emu/cm<sup>3</sup> at room temperature and a Curie temperature of approx. 350 K. The martensitic phase transformation was observed to occur at approx. 250 K.</p>