| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Napari, Mari
King's College London
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Forming-free and non-linear resistive switching in bilayer HfOx/TaOx memory devices by interface-induced internal resistancecitations
- 2024Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealingcitations
- 2024Forming-free and non-linear resistive switching in bilayer HfO x /TaO x memory devices by interface-induced internal resistancecitations
- 2021Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications
- 2021Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysiscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors
- 2020Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
- 2020Bandgap Lowering in Mixed Alloys of Cs2Ag(SbxBi1-x)Br6 Double Perovskite Thin Films
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2017Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configurationcitations
Places of action
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document
Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors
Abstract
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed by vacuum annealing at 300 C. Detailed characterisation by TEM-EDX and XPS shows that the surface of Cu2O is reduced following Al2O3 deposition and indicates the formation of 1-2 nm thick CuAlO2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al2O3, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.