People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Cattoni, A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
Places of action
Organizations | Location | People |
---|
document
Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes
Abstract
We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200 degrees C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3 mu m-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm(2) and eta = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm(2) is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.