| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zeimpekis, Ioannis
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition processcitations
- 2023Expanding the transmission window of visible-MWIR chalcogenide glasses by silicon nitride doping
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2022Room temperature phase transition of W-doped VO 2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Tuning MoS2 metamaterial with elastic strain
- 2019Tuning MoS 2 metamaterial with elastic strain
- 2019High-throughput physical vapour deposition flexible thermoelectric generatorscitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Wafer scale pre-patterned ALD MoS 2 FETs
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Structural modification of Ga-La-S glass for a new family of chalcogenidescitations
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017Tuneable sputtered films by doping for wearable and flexible thermoelectrics
- 2017A lift-off method for wafer scale hetero-structuring of 2D materials
Places of action
| Organizations | Location | People |
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conferencepaper
Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
Abstract
In this talk, we give an overview of our chalcogenide material and device capabilities and the applications they are driving, scaling from bulk glasses to two-dimensional films. Using a melt-quench technique, we routinely manufacture a family of Ga:La:S semiconducting glasses which offer considerable advantages over commercially available chalcogenides, expanding uses in defense, medical and sensing. We use these glasses to produce optical fibers using extrusion, rod and crucible drawing. We are also developing these materials further, for example by incorporating selenium resulting in improved infrared transmission, enabling both thermal and visible imaging for object recognition. Transition metal dichalcogenides (TMDCs) are promising alternatives to graphene, with bandgaps tunable through composition and number of layers. Today’s challenge remains in the fabrication of large area atomically thin TMDCs on desired substrates. We have developed chemical vapor and atomic layer deposition techniques to deposit highly crystalline TMDCs, from nanometers down to a monolayer on up to 6 inch wafers. We recently developed novel patterning techniques that result in defect free devices. Our applications range from 3D photonic crystals to photovoltaics and transistors. Finally we deposit chalcogenide thin films via sputtering and demonstrate applications which exploit their phase change and thermoelectric properties.