693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Juillaguet, Sandrine
Laboratoire Charles Coulomb
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (32/32 displayed)
- 2024Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot sizecitations
- 2024Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2citations
- 2015Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)citations
- 2011Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layerscitations
- 2009Optical investigations of stacking faults in silicon carbide
- 2009Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
- 2009Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes
- 2009O19. Optical investigations techniques used for stacking faults characterization in SiC
- 2008Optical investigations of stacking faults in silicon carbide
- 2008Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
- 2008Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes
- 20088H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?
- 2008Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
- 2008Optical properties of as-grown and process-induced stacking faults in 4H-SiCcitations
- 2007Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC
- 2007Screening the built-in electric field in 4H silicon carbide stacking faultscitations
- 2007Cathodoluminescence investigation of stacking faults extension in 4H-SiCcitations
- 2007Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layerscitations
- 2006Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC
- 2006Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiCcitations
- 2005Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation techniquecitations
- 2005Comparative evaluation of free-standing 3C-SiC crystals
- 2005Specific aspects of type II heteropolytype stacking faults in SiC
- 2005Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism
- 2005Control of epitaxial layers grown on 4H-SiC: from 3C microcrystalline inclusions to type II quantum well structurescitations
- 2004Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix
- 2004Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers
- 2004Comparative evaluation of free-standing 3C-SiC crystals
- 2004Specific aspects of type II heteropolytype stacking faults in SiC
- 2004Optical properties of GaN grown on porous silicon substrate
- 2003Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers
- 2003Optical properties of GaN grown on porous silicon substrate
Places of action
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document
Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers
Abstract
We report a LTPL (Low Temperature PhotoLuminescence) investigation of nominally undoped 4H-SiC epitaxial layers grown on (0001) 4H-SiC substrates. From room temperature Raman spectra, we find evidence of 3C micro-crystalline inclusions (MCIs). From LTPL spectra collected at various distance from the MCIs we find a coexistence of various defects, which behave like quantum wells (QWs) with various effective thickness. Using a 2-dimensional QW approximation we deduce the extent of the perturbation associated with the different defects.