693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Juillaguet, Sandrine
Laboratoire Charles Coulomb
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (32/32 displayed)
- 2024Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot sizecitations
- 2024Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2citations
- 2015Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)citations
- 2011Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layerscitations
- 2009Optical investigations of stacking faults in silicon carbide
- 2009Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
- 2009Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes
- 2009O19. Optical investigations techniques used for stacking faults characterization in SiC
- 2008Optical investigations of stacking faults in silicon carbide
- 2008Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
- 2008Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes
- 20088H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?
- 2008Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
- 2008Optical properties of as-grown and process-induced stacking faults in 4H-SiCcitations
- 2007Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC
- 2007Screening the built-in electric field in 4H silicon carbide stacking faultscitations
- 2007Cathodoluminescence investigation of stacking faults extension in 4H-SiCcitations
- 2007Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layerscitations
- 2006Electric-field screening effects in the micro-photolurninescence spectra of as-grown stacking faults in 4H-SiC
- 2006Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiCcitations
- 2005Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation techniquecitations
- 2005Comparative evaluation of free-standing 3C-SiC crystals
- 2005Specific aspects of type II heteropolytype stacking faults in SiC
- 2005Single-domain 3C-SiC epitaxially grown on 6H-SiC by the VLS mechanism
- 2005Control of epitaxial layers grown on 4H-SiC: from 3C microcrystalline inclusions to type II quantum well structurescitations
- 2004Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix
- 2004Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers
- 2004Comparative evaluation of free-standing 3C-SiC crystals
- 2004Specific aspects of type II heteropolytype stacking faults in SiC
- 2004Optical properties of GaN grown on porous silicon substrate
- 2003Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers
- 2003Optical properties of GaN grown on porous silicon substrate
Places of action
| Organizations | Location | People |
|---|
document
Optical investigations of stacking faults in silicon carbide
Abstract
We present an analysis of the electronic structure of in-grown 3C and 8H stacking faults (SFs) in a 4H-SiC matrix. First, the concept of low temperature photoluminescence optical signature of SFs is discussed. Then, the results of type-II quantum well (QW) model calculations are displayed, taking into account the effect of the valence band offset, internal polarization field and non homogeneity of the potential well. In this case, we show that a satisfactory description of 3C QWs signature can be reached. The situation is entirely different for 8H. Since a 8H unit cell is nothing but two 3C lamellae coupled by an hexagonal turn, we investigate in detail the effect of coupling more and more two 3C lamellae until a final 8H QW is found. In this way, we show that a reasonable agreement with experimental data can be reached.