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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Niskanen, Antti
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2007Radical-enhanced atomic layer deposition of silver thin films using phosphine-adducted silver carboxylatescitations
- 2007Radical enhanced atomic layer deposition of titanium dioxidecitations
- 2005Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Filmscitations
- 2000Reactively sputtered Ta2N and TaN diffusion barriers for copper metallization
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document
Reactively sputtered Ta2N and TaN diffusion barriers for copper metallization
Abstract
<p>The reaction mechanisms in the Si/TaN<sub>x</sub>/Cu metallization systems are discussed based on the experimental results and the assessed ternary Si-Ta-N and Ta-N-Cu phase diagrams. The 50 nm thick Ta<sub>2</sub>N barrier layer was observed to fail after anneal at 725 °C for 30 min due to the diffusion of Cu through the barrier layer and the resulting formation of Cu<sub>3</sub>Si precipitates. No tantalum silicide formation was observed. TaN barrier layers failed by the same mechanism without any tantalum silicide formation at 750 °C/30 min. Adhesion of Cu to the TaN layers was not as good as to Ta<sub>2</sub>N and some adhesion failures were observed. For comparison thinner (10nm) and thicker (100 nm) TaN<sub>x</sub> films were used as diffusion barriers between Cu and Si. Sheet resistance measurements, x-ray diffraction (XRD), and scanning electron microscopy (SEM) were used in studying these thin film reactions.</p>