• Cueff, Sébastien
• Hu, Xuan
• Rojo-Romeo, Pedro
• Orobtchouk, Regis

Abstract

We present a numerical method to accurately model the electrooptic interaction in anisotropic materials. Specifically, we combine a fullvectorial finite-difference optical mode solver with a radio-frequency solver to analyze the overlap between optical modes and applied electric field. This technique enables a comprehensive understanding on how electrooptic effects modify individual elements in the permittivity tensor of a material. We demonstrate the interest of this approach by designing a modulator that leverages the Pockels effect in a hybrid silicon-BaTiO3 slot waveguide. Optimized optical confinement in the active BaTiO3 layer as well as design of travelling-wave index-matched electrodes is presented. Most importantly, we show that the overall electro-optic modulation is largely governed by off-diagonal elements in the permittivity tensor. As most of active electro-optic materials are anisotropic, this method paves the way to better understand the physics of electro-optic effects and to improve optical modulators. (C) 2015 Optical Society of America

Topics

• impedance spectroscopy
• anisotropic
• Silicon