| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Fressengeas, Nicolas
Institut Jean Lamour
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Structural, optical and electrical properties of single-phase wurtzite ZnMgAlO thin films deposited by ultrasonic spray pyrolysiscitations
- 2023Development of a two-step process based on ultrasonic spray pyrolysis to optimize optical and electrical properties of ZnMgAlO
- 2021The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructurescitations
- 2021The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructurescitations
- 2021Ultrasonic spray pyrolysis deposition of cuprous oxide thin films: Microstructure and optical investigations
- 2021Effect of the precursor concentration on structural properties of ZnO thin films by ultrasonic spray pyrolysis
- 2021Elaboration of high-transparency ZnO thin films by ultrasonic spray pyrolysis with fast growth ratecitations
- 2020Development of InGaN based solar cells: present status and challenges
- 2020Development of InGaN based solar cells: present status and challenges
- 2019Numerical investigations of the impact of low cost fabrication of Cu2O on solar cell performances
- 2019Numerical investigations of the impact of low cost fabrication of Cu2O on solar cell performances
- 2017Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell
- 2017Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell
Places of action
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document
Effect of Interface Properties on the Electrical Characteristics of InGaN-based Multijunction Solar Cell
Abstract
The InGaN ternary alloy has the potentiality to achieve high efficiency solar cells: tunable bandgap in the whole solar spectrum, high absorption coefficient, high stability and radiation tolerance. These very promising characteristics make InGaN potentially ideal for designing and developing next-generation high-efficiency thin films solar cells. However, challenging issues remain to address: (i) the difficulty to elaborate sufficiently thick monocrystalline InGaN layers with a high Indium content; (a) the high defects density and the spontaneous and piezoelectric polarizations; (iii) the p-doping which remains difficult to master. In this report, we use rigorous optimization approach based on state-of-the-art optimization algorithms to investigate the effect of defects and polarization (spontaneous and piezoelectric) on a double junction InGaN solar cell. A better understanding of the mechanisms involved in the heterostructure has a crucial impact on the design and elaboration of high efficiency InGaN thin films solar cells which require, in particular, a precise control of the Tunnel Junction elaboration which is still very challenging.